2014. 8. 07 1/3 semiconductor technical data KTK7132E revision no : 1 ultra-high speed switching applications analog switch applications features h 2.5 gate drive. h low threshold voltage : v th =0.5 q 1.5v. h high speed. h small package. h enhancement-mode. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) n channel mos field effect transistor equivalent circuit characteristic symbol test condition min. typ. max. unit gate leakage current i gss v gs = ? 16v, v ds =0v - - ? 1 a drain-source breakdown voltage v (br)dss i d =100 a, v gs =0v 30 - - v drain cut-off current i dss v ds =30v, v gs =0v - - 1 a gate threshold voltage v th v ds =3v, i d =0.1ma 0.5 - 1.5 v forward transfer admittance |y fs | v ds =3v, i d =10ma 25 - - ms drain-source on resistance r ds(on) i d =10ma, v gs =2.5v - 4 7 ? input capacitance c iss v ds =3v, v gs =0v, f=1mhz - 8.5 - pf reverse transfer capacitance c rss v ds =3v, v gs =0v, f=1mhz - 3.3 - pf output capacitance c oss v ds =3v, v gs =0v, f=1mhz - 9.3 - pf switching time turn-on time t on v dd =5v, i d =10ma, v gs =0 q 5v - 50 - ns turn-off time t off - 180 - ns characteristic symbol rating unit drain-source voltage v dss 30 v gate-source voltage v gss ? 20 v dc drain current i d 100 ma drain power dissipation p d * 200 mw channel temperature t ch 150 ? storage temperature range t stg -55 q 150 ? note) *total rating, surface mounted on 1 ? 1 fr4 board.
2014. 8. 07 2/3 KTK7132E revision no : 1 q 1 , q 2 common.
2014. 8. 07 3/3 KTK7132E revision no : 1
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